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d a t a sh eet product specification supersedes data of 2001 feb 14 2001 apr 17 integrated circuits TDA1517ATW 8w btl or 2 4w sepower amplifier
2001 apr 17 2 nxp semiconductors product specification 8 w btl or 2 4 w se power amplifier TDA1517ATW features ? requires very few external components ? flexibility in use: mono bridge-tied load (btl) and stereo single-ended (se); it should be noted that in stereo applications the outputs of both amplifiers are in opposite phase ? high output power ? low offset voltage at output (important for btl) ? fixed gain ? good ripple rejection ? mode select switch (opera ting, mute and standby) ? ac and dc short-circuit safe to ground and v p ? electrostatic discharge protection ? thermal protection ? reverse polarity safe ? capable of handling high energy on outputs (v p =0v) ? no switch-on/switch-off plop ? low thermal resistance. general description the TDA1517ATW is an integrated class-ab output amplifier contained in a plastic heatsink thin shrink small outline package (htssop20). the device is primarily developed for multimedia applications. quick reference data ordering information symbol parameter conditions min. typ. max. unit v p supply voltage 6 12 18 v i orm repetitive peak output current ?? 2.5 a i q(tot) total quiescent current ? 40 80 ma i stb standby current ? 0.1 100 a se application p o output power thd = 10%; r l =4 ? 4 ? w svrr supply voltage ripple rejection r s =0 46 ?? db cs channel separation r s =10k 40 55 ? db v n(o) noise output voltage r s =0 ? 50 ? v ? z i ? input impedance 50 ?? k btl application p o output power thd = 10%; r l =8 ? 8 ? w svrr supply voltage ripple rejection r s =0 50 ?? db ? v oo ? output offset voltage ?? 150 mv v n(o)(offset) noise output offset voltage r s =0 ? 70 ? v ? z i ? input impedance 25 ?? k type number package name description version TDA1517ATW htssop20 plastic thermal enhanced thin shrink small outline package; 20 leads; body width 4.4 mm; exposed die pad sot527-1
2001 apr 17 3 nxp semico nductors product specification 8 w btl or 2 4 w se power amplifier TDA1517ATW block diagram handbook, full pagewidth mode mgu303 out1a out1b 15 k 15 k x 1 va standby switch v p mute switch standby reference voltage 18 k 18 k 2 k 60 k mute switch c m c m power stage 8 9 15 v p1 v p2 16 17 not connected 1 2 6 7 14 19 20 mute switch va va 2 k 60 k power stage 12 13 4 10 11 sgnd pgnd1 pgnd2 out2a out2b non-inverting input 1 inverting input 2 18 svrr 5 + ? + ? + ? + + ? + ? 3 TDA1517ATW mute reference voltage input reference voltage fig.1 block diagram.
2001 apr 17 4 nxp semico nductors product specification 8 w btl or 2 4 w se power amplifier TDA1517ATW pinning symbol pin description n.c. 1 not connected n.c. 2 not connected in1+ 3 non-inverting input 1 sgnd 4 signal ground svrr 5 supply voltage ripple rejection n.c. 6 not connected n.c. 7 not connected out1a 8 output 1a out1b 9 output 1b pgnd1 10 power ground 1 pgnd2 11 power ground 2 out2a 12 output 2a out2b 13 output 2b n.c. 14 not connected v p1 15 supply voltage 1 v p2 16 supply voltage 2 mode 17 mode select switch in2 ? 18 inverting input 2 n.c. 19 not connected n.c. 20 not connected handbook, halfpage TDA1517ATW mgu302 1 2 3 4 5 6 7 8 9 10 n.c. n.c. in1 + sgnd svrr n.c. n.c. out1a out1b pgnd1 n.c. n.c. in2 ? mode v p2 v p1 n.c. out2b out2a pgnd2 20 19 18 17 16 15 14 13 12 11 fig.2 pin configuration. functional description the TDA1517ATW contains two identical amplifiers with differential input stages. this device can be used for bridge-tied load (btl) or single-ended (se) applications. the gain of ea ch amplifier is fixed at 20 db. a special feature of this device is the mode select switch. since this pin has a very low input current (<40 a), a low cost supply switch can be used. with this switch the TDA1517ATW can be switched into three modes: ? standby: low supply current ? mute: input signal suppressed ? operating: normal on condition.
2001 apr 17 5 nxp semico nductors product specification 8 w btl or 2 4 w se power amplifier TDA1517ATW limiting values in accordance with the absolute maximum rating system (iec 60134). thermal characteristics dc characteristics v p =12v; t amb =25 c; measured in fig.3; unless otherwise specified. note 1. the circuit is dc adjusted at v p = 6 to 18 v and ac operating at v p = 8.5 to 18 v. symbol parameter conditions min. max. unit. v p supply voltage ? 18 v v psc ac and dc short-circuit-safe voltage ? 18 v v rp reverse polarity voltage ? 6v erg o energy handling capability at outputs v p =0v ? 200 mj i osm non-repetitive peak output current ? 4a i orm repetitive peak output current ? 2.5 a p tot total power dissipation ? 5w t vj virtual junction temperature ? 150 c t stg storage temperature ? 55 +150 c t amb ambient temperature ? 40 +85 c symbol parameter conditions value unit tbf ?? symbol parameter conditions min. typ. max. unit supply v p supply voltage note 1 6.0 12 18 v i q quiescent current r l = ? 40 80 ma operating condition v mode(oper) mode switch voltage level 8.5 ? v p v i mode(oper) mode switch current v mode =12v ? 15 40 a v o dc output voltage ? 5.7 ? v ? v oo ? dc output offset voltage ?? 150 mv mute condition v mode(mute) mode switch voltage level 3.3 ? 6.4 v v o dc output voltage ? 5.7 ? v ? v oo ? dc output offset voltage ?? 150 mv standby condition v mode(stb) mode switch voltage level 0 ? 2v i stb standby current ? 0.1 100 a
2001 apr 17 6 nxp semico nductors product specification 8 w btl or 2 4 w se power amplifier TDA1517ATW ac characteristics v p =12v; f=1khz; t amb =25 c; unless otherwise specified. symbol parameter conditions min. typ. max. unit se application; note 1 p o output power note 2 thd = 1% 2.5 3.3 ? w thd = 10% 3 4 ? w thd total harmonic distortion p o =1w ? 0.1 ? % f ro(l) low frequency roll-off ? 1db; note3 ? 25 ? hz f ro(h) high frequency roll off ? 1db 20 ?? khz g v voltage gain 19 20 21 db ? g v ? channel balance ?? 1db svrr supply voltage ripple rejection note 4 on 46 ?? db mute 46 ?? db standby 80 ?? db ? z i ? input impedance 50 60 75 k v n(o)(rms) noise output voltage (rms value) note 5 on; r s =0 ? 50 ? v on; r s =10k ? 70 100 v mute; note 6 ? 50 ? v cs channel separation r s =10k 40 55 ? db v o(mote) output voltage in mute note 7 ?? 2mv btl application; note 8 p o output power note 2 thd = 1% 5 6.6 ? w thd = 10% 6.5 8.0 ? w thd total harmonic distortion p o =1w ? 0.03 ? % f ro(l) low frequency roll-off ? 1db; note3 ? 25 ? hz f ro(h) high frequency roll off ? 1db 20 ?? khz g v voltage gain 25 26 27 db svrr supply voltage ripple rejection note 4 on 50 ?? db mute 50 ?? db standby 80 ?? db ? z i ? input impedance 25 30 38 k v n(o)(rms) noise output voltage (rms value) note 5 on; r s =0 ? 70 ? v on; r s =10k ? 100 200 v mute; note 6 ? 60 ? v v o(mute) output voltage in mute note 7 ?? 2mv
2001 apr 17 7 nxp semico nductors product specification 8 w btl or 2 4 w se power amplifier TDA1517ATW notes to the characteristics 1. r l =4 , measured in fig.4. 2. output power is measured directly at the output pins of the ic. 3. frequency response externally fixed. 4. v ripple =v ripple(max) = 2 v (p-p); r s =0 . 5. noise voltage measured in a bandwidth of 20 hz to 20 khz. 6. noise output voltage independent of r s . 7. v i =v i(max) = 1 v (rms). 8. r l =8 , measured in fig.3. application information handbook, full pagewidth mgu304 15 41011 16 8 + out ? out pgnd sgnd 9 100 nf 1000 f r l 8 v cc TDA1517ATW 15 k 10 k 8.2 k 15 k 12 13 + in1 3 18 17 mode 5 470 nf a r i 60 k b v cc v cc standby/ mute logic micro- controller c1 c2 c1 0 0 1 on mute standby c2 0 1 0 short circuit and temperature protection input reference voltage r i 60 k fig.3 btl application block diagram.
2001 apr 17 8 nxp semico nductors product specification 8 w btl or 2 4 w se power amplifier TDA1517ATW handbook, full pagewidth mgu305 15 41011 16 8 + out ? out pgnd sgnd 9 100 nf 1000 f r l 4 v cc TDA1517ATW 15 k 10 k 8.2 k 15 k 100 f 1000 f r l 4 1000 f 12 13 in1 + 3 18 17 mode 5 220 nf a r i 60 k in2 ? 220 nf b v cc v cc standby/ mute logic micro- controller c1 c2 c1 0 0 1 on mute standby c2 0 1 0 short circuit and temperature protection input reference voltage r i 60 k fig.4 se application block diagram. test conditions t amb =25 c; unless otherwise specified: v p =12v, btl application, f = 1 khz, r l =8 , fixed gain = 26 db, audio band-pass: 22 hz to 22 khz. in the figures as a function of frequency a band-pass of 10 hz to 80 khz was applied. the btl application block diagram is shown in fig.3. the pcb layout [which accommodates both the mono (btl) and stereo (single-ended) application] is shown in fig.6. printed-circuit board (pc b) layout and grounding for high system performance levels certain grounding techniques are imperative. the input reference grounds have to be tied to their respective source grounds and must have separate traces from the power ground traces; this will separate the large (o utput) signal currents from interfering with the small ac input signals. the small signal ground traces should be located physically as far as possible from the power ground traces. supply and output traces should be as wide as possible for delivering maximum output power. proper supply bypassing is critical for low noise performance and high power supply rejection. the respective capacitor locations should be as close as possible to the device and grounded to the power ground. decoupling the power supply also prevents unwanted oscillations. for su ppressing higher fr equency transients (spikes) on the supply line a capacitor with low esr (typical 0.1 f) has to be placed as close as possible to the device. for suppressing lower frequency noise and ripple signals, a large electrolytic capacitor (e.g. 1000 f or greater) must be placed close to the ic. in single-ended (stereo) application a bypass capacitor connected to pin svr reduces the noise and ripple on the midrail voltage. for good thd and noise performance a low esr capacitor is recommended. input configuration it should be noted that the dc level of the input pins is approximately 2.1 v; a coupling capacitor is therefore necessary.
2001 apr 17 9 nxp semico nductors product specification 8 w btl or 2 4 w se power amplifier TDA1517ATW the formula for the cut-off frequency at the input is as follows: thus as can be seen it is not ne cessary to use high capacitor values for the input; so the delay during switch-on, which is necessary for charging the input capacitors, can be minimized. this results in a good low frequency response and good switch-on behaviour. in stereo applications (single-ended) coupling capacitors on both input and output are necessary. it should be noted that the outputs of both amplifiers are in opposite phase. built-in protection circuits the ic contains two types of protection circuits: ? short-circuits the outputs to ground, the supply to ground and across the load: short-circuit is detected and controlled by a soar protection circuit ? thermal shut-down protection: the junction temperature is measured by a temperature sensor. thermal foldback is activated at a junction temperature of >150 c. output power the output power as a function of supply voltage has been measured on the output pins and at thd = 10%. the maximum output power is limited by the maximum allowable power dissipation and the maximum available output current, 2.5 a repetitive peak current. supply voltage ripple rejection the svrr has been measured without an electrolytic capacitor on pin 5 and at a bandwidth of 10 hz to 80 khz. the curves for operating and mute condition (respectively) were measured with r source =0 . only in single-ended applications is an electrolytic capacitor (e.g. 100 f) on pin 5 necessary to improve the svrr behaviour. headroom a typical music cd requires at least 12 db (is factor 15.85) dynamic headroom (compared with the average power output) for passing the loudest portions without distortion. the following calculation can be made for this application at v p = 12 v and r l =8 : p o at thd = 0.1% is approximately 5 w (see fig.7). average listening level without any distortion yields: the power dissipation can be derived from fig.11 for 0 db and 12 db headroom. table 1 power rating thus for the average listening level (music power) a power dissipation of 2.0 w can be used for the thermal pcb calculation; see section ?thermal behaviour (pcb design considerations)?. mode pin for the 3 functional modes: standby, mute and operate, the mode pin can be driven by a 3-state logic output stage, e.g. a microcontroller with some extra components for dc-level shifting; see fig.10 for the respective dc levels. ? standby mode is activated by a low dc level between 0 and 2 v. the power consum ption of the ic will be reduced to <0.12 mw. ? mute mode is activated by a dc level between 3.3 and 6.4 v. the outputs of the amplifier will be muted (no audio output); however the amplifier is dc biased and the dc level of the output pins stays at half the supply voltage. the input coupling capacitors are charged when in mute mode to avoid pop-noise. ? the ic will be in the oper ating condition when the voltage at pin mode is between 8.5 v and v cc . switch-on/switch-off to avoid audible plops during switch-on and switch-off of the supply voltage, the mode pin has to be set in standby condition (v cc level) before the voltage is applied (switch-on) or removed (switch-off). the input and svrr capacitors are smoothly charged during mute mode. the turn-on and turn-off time can be influenced by an rc-circuit connected to the mode pin. switching the device or the mode pin rapidly on and off may cause ?click and pop? noise. this can be prevented by proper timing on the mode pin. further improvement in the btl application can be obtained by connecting an electrolytic capacitor (e.g. 100 f) between the svrr pin and signal ground. f ic 1 2 r i c i ------------------------------ = f ic 1 2 30 10 3 ? 470 10 9 ? ----------------------------------------------------------------------------- - 11 hz == rating headroom power dissipation p o =5w (thd = 0.1%) 0db 3.5w 12 db 2.0 w p all p tot factor ---------------- - 5 15.85 -------------- - 315 mw ===
2001 apr 17 10 nxp semico nductors product specification 8 w btl or 2 4 w se power amplifier TDA1517ATW thermal behaviour (pcb design considerations) the typical thermal resistance [r th(j-a) ] of the ic in the htssop20 package is 37 k/w if the ic is soldered on a printed-circuit board with double sided 35 m copper with a minimum area of approximately 30 cm 2 . the actual usable thermal resistance depends strongly on the mounting method of the device on the printed-circuit board, the soldering method and the area and thickness of the copper on the printed-circuit board. the bottom ?heat-spreader? of the ic has to be soldered efficiently on the ?thermal land? of the copper area of the printed-circuit board using the re-flow solder technique. a number of thermal vias in the ?thermal land? provide a thermal path to the opposite copper site of the printed-circuit board. the size of the surface layers should be as large as needed to dissipate the heat. the thermal vias (0.3 mm ? ) in the ?thermal land? should not use web construction techniques, because those will have high thermal resistance; continuous connection completely around the via-hole is recommended. for a maximum ambient temperature of 60 c the following calculation can be made: for the application at v p = 12 v and r l =8 the (all-) music power dissipation approximately 2.0 w; t j(max) =t amb +p r th(j-a) =60 c+2.0 37 = 134 c. note: the above calculation holds for application at ?average listening level? music output signals. applying (or testing) with sine wave sign als will produce approximately twice the music power dissipation; at worst case condition this can activate the maximum temperature protection. handbook, full pagewidth 60 50 40 30 20 10 0 k/w 1 0 number of 35 m copper layers 234 cu-layer 2-4 mgu306 l l on-board-cooling copper design cu-layer 1 r th(j-a) r th(j-p) fig.5 thermal resistance of the htssop20 mounted on printed-circuit board. r th(j-p) curve is given for practical calculation purpose. l = 30 mm plus vias
2001 apr 17 11 nxp semico nductors product specification 8 w btl or 2 4 w se power amplifier TDA1517ATW handbook, full pagewidth mgu312 in1 sept ? 2000 in2 ? out2 on std by + out1 + v p 100 nf 220 nf 1000 f 25 v 1000 f 16 v 100 f/16 v tda 1517atw top view bottom copper layout top view component layout top view top copper layout fig.6 printed-circuit board layout for btl and se application. for btl applications the two 1000 f/16 v capacitors must be replaced by 0 jumpers.
2001 apr 17 12 nxp semico nductors product specification 8 w btl or 2 4 w se power amplifier TDA1517ATW typical performance characteristics for btl application at v p = 12 v and r l =8 handbook, halfpage 10 1 10 ? 1 10 ? 2 mgu307 10 ? 2 10 ? 1 1 thd (%) p o (w) 10 fig.7 thd as a function of p o . handbook, halfpage 10 1 10 ? 1 10 ? 2 mgu308 10 ? 2 10 ? 1 1 thd (%) 10 f (khz) 10 2 p o = 1 w fig.8 thd as a function of frequency. handbook, halfpage ? 80 ? 60 ? 40 ? 20 0 mgu309 10 ? 2 10 ? 1 110 f (khz) svrr (db) 10 2 mute fig.9 svrr as a function of frequency. handbook, halfpage 12 4 0810 v o (v) v mode (v) 26 10 1 10 ? 1 10 ? 2 10 ? 3 10 ? 4 mgu310 fig.10 v o as a function of v mode .
2001 apr 17 13 nxp semico nductors product specification 8 w btl or 2 4 w se power amplifier TDA1517ATW handbook, halfpage 010 6 0 2 1 3 4 5 2 p (w) 468 p o (w) mgu311 v p = 15 v r l = 16 v p = 12 v r l = 8 fig.11 power dissipation as a function of p o . handbook, halfpage 0 2 68 p o (w) 10 12 18 12 10 4 8 6 14 16 v p (v) mgu323 r l = 4 8 16 fig.12 p o as a function of v p .
2001 apr 17 14 nxp semico nductors product specification 8 w btl or 2 4 w se power amplifier TDA1517ATW package outline unit a 1 a 2 a 3 b p cd (1) e (2) z (1) d h ell p y w v references outline version european projection issue date iec jedec jeita mm 0.15 0.05 0.95 0.80 0.30 0.19 0.20 0.09 6.6 6.4 4.3 4.1 e h h e 3.1 2.9 4.5 4.3 0.65 6.6 6.2 0.5 0.2 8 0 o o 0.13 0.1 0.2 1 dimensions (mm are the original dimensions) notes 1. plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. plastic interlead protrusions of 0.25 mm maximum per side are not included. 0.75 0.50 sot527-1 mo-153 03-04-07 05-11-02 w m b p d d h e h z exposed die pad side e 0.25 110 20 11 a a 1 a 2 l p detail x l (a ) 3 h e e c v m a x a y 0 2.5 5 mm scale htssop20: plastic thermal enhanced thin shrink small outline package; 20 leads; body width 4.4 mm; exposed die pad sot527- 1 a max. 1.1 pin 1 index
2001 apr 17 15 nxp semico nductors product specification 8 w btl or 2 4 w se power amplifier TDA1517ATW soldering introduction to soldering surface mount packages this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our ?data handbook ic26; integrated circuit packages? (document order number 9398 652 90011). there is no soldering method that is ideal for all surface mount ic packages. wave soldering ca n still be used for certain surface mount ics, but it is not suitable for fine pitch smds. in these situations reflow soldering is recommended. reflow soldering reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. typical reflow peak temperatures range from 215to250 c. the top-surface temperature of the packages should preferable be kept below 220 c for thick/large packages, and below 235 c for small/thin packages. wave soldering conventional single wave soldering is not recommended for surface mount devices (smds) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. to overcome these problems the double-wave soldering method was specif ically developed. if wave soldering is used the following conditions must be observed for optimal results: ? use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. ? for packages with leads on two sides and a pitch (e): ? larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; ? smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves at the downstream end. ? for packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves downstream and at the side corners. during placement and before soldering, the package must be fixed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. typical dwell time is 4 seconds at 250 c. a mildly-activated flux will elim inate the need for removal of corrosive residues in most applications. manual soldering fix the component by first soldering two diagonally-opposite end leads. use a low voltage (24 v or less) soldering iron applied to the flat part of the lead. contact time must be limit ed to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 c.
2001 apr 17 16 nxp semico nductors product specification 8 w btl or 2 4 w se power amplifier TDA1517ATW suitability of surface mount ic packages for wave and reflow soldering methods notes 1. all surface mount (smd) packages are moisture sensitive. depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). for details, refer to the drypack information in the ?data handbook ic26; integrated circuit packages; section: packing methods? . 2. these packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 3. if wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. the package footprint must incorporate solder thieves downstream and at the side corners. 4. wave soldering is only suitable for lqfp, tqfp and qfp packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 5. wave soldering is only suitable for ssop and tssop packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. package soldering method wave reflow (1) bga, hbga, lfbga, sqfp, tfbga not suitable suitable hbcc, hlqfp, hsqfp, hsop, htqfp, htssop, hvqfn, sms not suitable (2) suitable plcc (3) , so, soj suitable suitable lqfp, qfp, tqfp not recommended (3)(4) suitable ssop, tssop, vso not recommended (5) suitable
2001 apr 17 17 nxp semico nductors product specification 8 w btl or 2 4 w se power amplifier TDA1517ATW data sheet status notes 1. please consult the most recently issued document before initiating or completing a design. 2. the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. the latest pr oduct status information is available on the internet at url http://www.nxp.com. document status (1) product status (2) definition objective data sheet development this document contains data from the objective specification for product development. preliminary data sheet qualification this document contains data from the preliminary specification. product data sheet production this document contains the product specification. disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semico nductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without lim itation - lost profits, lost savings, business interrup tion, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semi conductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, lif e-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for incl usion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are fo r illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assi stance with ap plications or customer product design. it is customer?s sole responsibility to dete rmine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as for the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applications and products using nxp semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect.
2001 apr 17 18 nxp semico nductors product specification 8 w btl or 2 4 w se power amplifier TDA1517ATW limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will c ause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeat ed exposure to lim iting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the general terms and conditions of comme rcial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconductors products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. quick reference data ? the quick refere nce data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semiconductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semicond uctors? warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond nxp semiconductors? standard warranty and nxp semiconductors? product specifications.
nxp semiconductors provides high performance mixed signal and standard product solutions that leverage its leadi ng rf, analog, power management, interface, security and digital processing expertise contact information for additional information please visit: http://www.nxp.com for sales offices addresses send e-mail to: salesaddresses@nxp.com ? nxp b.v. 2010 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reli able and may be changed without notice. no liabilit y will be accepted by the publisher for any consequen ce of its use. publicat ion thereof d oes not con vey nor imply any license under patent- or other industrial or intellectual property rights. customer notification this data sheet was changed to reflect the new company name nxp semiconductors, including new legal definitions and disclaimers. no changes were made to the technical content, except for package outline drawings which were updated to the latest version. the ordering information was modified accordingly. printed in the netherlands 753503/02/pp 19 date of release: 2001 apr 17 document order number: 9397 750 08264

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